AUIRGP35B60PD-E;中文规格书,Datasheet资料.pdf

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE AUIRGP35B60PD-E 01/11/10 Features ? NPT Technology, Positive Temperature Coefficient ? Lower VCE(SAT) ? Lower Parasitic Capacitances ? Minimal Tail Current ? HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode ? Tighter Distribution of Parameters ? Higher Reliability ? Lead-Free, RoHS Compliant ? Automotive Qualified* Benefits ? Parallel Operation for Higher Current Applications ? Lower Conduction Losses and Switching Losses ? Higher Switching Frequency up to 150KHz Applications ? PFC and ZVS SMPS Circuits ? DC/DC Converter Charger 1
AUTOMOTIVE GRADE G C E Gate Collector Emitter TO-247AD AUIRGP35B60PD-E G C E C E G n-channel C VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters
RCE(on) typ. = 84m? ID (FET equivalent) = 35A *Qualification standards can be found at / Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 60 IC @ TC = 100°C Continuous Collector Current 34 ICM Pulse Collector Current (Ref. Fig. C.T.4) 120 ILM Clamped Inductive Load Current 120 A IF @ TC = 25°C Diode Continous Forward Current 40 IF @ TC = 100°C Diode Continous Forward Current 15 IFRM Maximum Repetitive Forward Current
60 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 308 W PD @ TC = 100°C Maximum Power Dissipation 123 TJ Operating Junction and -55 to +150 TST