BSP170PL6327INCT-ND-pmos管.pdf

BSP170P ® SIPMOS Small-Signal-Transistor Product Summary Features V DS -60 V • P-Channel R DS(on),max 0.3 Ω • Enhancement mode I D -1.9 A • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 •Halogen­free according to IEC61249­2­21 Type Package Tape and reel information Marking Lead free Packing BSP170P PG-SOT223 H6327: 1000pcs/reel BSP170P Yes Non Dry Maximum ratings, at Tj =25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current I D TA=25 °C -1.9 A TA=70 °C -1.5 Pulsed drain current I D,pulse TA=25 °C -7.6 Avalanche energy, single pulse E AS I D=1.9 A, R GS=25 Ω 70 mJ Avalanche energy, periodic limited by E