IRF7343QTRPBF;中文规格书,Datasheet资料.pdf

PD - 96110A Advanced Process Technology N-CHANNEL MOSFET Ultra Low On-Resistance 1 8 S1 D1 Dual N and P Channel MOSFET 2 7 Surface Mount G1 D1 Available in Tape Reel S2 3 6 D2 150°C Operating Temperature 4 5 G2 D2 Lead-Free P-CHANNEL MOSFET Ω Ω Top View ® These HEXFET Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is SO-8 also available in Tape Reel.