材料物理课件半导体器件原理.pptVIP

ID U DS 2V UGS=0V 1V 3V 4V 5V Variable resistance Zone Blocked Zone Steady Current Zone Output Characteristics 0 Transfer Characteristics UGS 0 ID IDSS VP N Channel output characteristics ID U DS 0 UGS=0V -1V -3V -4V -5V 2 ) MOS-FET: A、Structure P N N G S D SiO2 insulation layer Channel Metal (Al or Si) G S D N Channel (Increased) N Exhausted P N N G S D Channel added G S D N P P G S D G S D P increased P Exhausted N P P G S D G S D Channel added 0 ID UGS VT B、 N channel Increased output characteristics ID U DS 0 UGS>0 0 ID UGS VT N channel exhausted output characteristics ID U DS 0 UGS=0 UGS<0 UGS>0 3,Thin film transistor(TFT) 1) Structure G Insulation layer Semiconductive layer S D OFET的重要参数 的工作曲线 （I－V曲线） 开关比 迁移率 * * * Semiconductive Devices 1, Semiconductive diode 1), Structures Spot contact PN Face contact P N Symbol： 2),I-V characteristics U I Startup Voltage: Si:0.6V,Ge:0.2V。 Operating Voltage: Si:0.6~0.7V,Ge:0.2~0.3V。 Reverse saturated Voltage :UBR 3) Some parameters A) maximal operating current: IOM B) Reverse saturated Voltage :UBR C) Reverse Current: IR D) Differential resistance rD iD uD ID UD Q ?iD ?uD D) Capacitance in diode Including：Barrier Capacitance CB and Diffusion Capacitance CD。 CB ：Produced by the change of space charge under the variational voltage。 CD ：Produced by the change of the minority carrier under the variational voltage。 P + - N rd RL ui uo ui uo t t Application example 1：Half-wave rectifier Application example 2： t t t ui uR uo R RL ui uR uo 4) Some special diodes A) Zener diode B) Photoelectrical diode I U Light Intensity Increased C) Light-emitting diode 2, Semiconductive dynatron (Bipolar Junction Transistor) 1) Structure B E(Emitter) C(Collector) N N P (Base) NPN P N P B C E PNP Current amplificatory multiple Note: BE junction under forward bias and CB junction under reverse bias. B(Base) E(emitter) C(collector) IB IE IC NPN B E C IB IE IC PNP 2) I-V Curve IC mA ?A V V UCE UBE RB IB EC EB Input character