MW7IC915NT1;中文规格书,Datasheet资料.pdf

Freescale Semiconductor Document Number: MW7IC915N Technical Data Rev. 1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip MW7IC915NT1 matching that makes it usable from 698 to 960 MHz. This multi- stage struc‐ ture is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz 728-960 MHz, 1.6 W AVG., 28 V • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, SINGLE W-CDMA IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude RF LDMOS WIDEBAND Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB INTEGRATED POWER AMPLIFIER @ 0.01% Probability on CCDF. G PAE ACPR ps Frequency (dB) (%) (dBc) 865 MHz 37.9 17.1 -50.4 880 MHz 38.0 17.4 -50.6 895 MHz 37.8 17.5 -51.3 • Capable of Handling