sst39vf320116兆位32兆位64兆位(x16)多用途闪存.doc

16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Preliminary Specifications FEATURES: ? Organized as 1M x16: SST39VF1601/1602 2M x16: SST39VF3201/3202 4M x16: SST39VF6401/6402 ? Single Voltage Read and Write Operations – 2.7-3.6V ? Superior Reliability ? Latched Address and Data ? Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 μs (typical) ? Automatic Write Timing ? End-of-Write Detection – Toggle Bits – Data# Polling ? CMOS I/O Compatibility ? JEDEC Standard – Flash EEPROM Pinouts and command sets ? Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) for 16M and 32M – 48-ball TFBGA (8mm x 10mm) for 64M PRODUCT DESCRIPTION The SST39VF160x/320x/640x devices are 1M x16, 2M x16, and 4M x16 respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x/640x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST39VF160x/320x/640x devices provide a typical Word- Program time of 7 μsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program opera- tion. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF160x/320x/640x devices are suited for app