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Huazhong University of Science and Technology
The Department of Electronics and Information Engineering;PART 1 SEMICONDUCTOR DEVICES AND BASIC APPLICATIONS
Chapter 1 Semiconductor Materials and Diodes
Chapter 2 Diode Circuits
Chapter 3 The Field-Effect Transistor
Chapter 4 Basic FET Amplifiers
Chapter 5 The Bipolar Junction Transistor
Chapter 6 Basic BJT Amplifiers
Chapter 7 Frequency Response
Chapter 8 Output Stages and Power Amplifiers
PART 2 ANALOG ELECTRONICS
Chapter 9 Ideal Operational Amplifiers and Op-Amp Circuits
Chapter 10 Integrated Circuit Biasing and Active Loads
Chapter 11 Differential and Multistage Amplifiers
Chapter 12 Feedback and Stability
Chapter 13 Operational Amplifier Circuits
Chapter 14 Nonideal Effects in Operational Amplifier Circuits
Chapter 15 Applications and Design of Integrated Circuits;Ch5. The Bipolar Junction Transistor;Ch5. The Bipolar Junction Transistor;Ch5. The Bipolar Junction Transistor;Ch5. The Bipolar Junction Transistor;5.1 Basic Bipolar Junction Transistor (BJT);;5.1.1 Transistor Structure;5.1.2 NPN Transistor: Forward-Active Mode Operation;B-E junction is forward biased.
B-C junction is reverse biased.;;5.1.2 NPN Transistor: Forward-Active Mode Operation;2. Current relationships;2. Current relationships;IE=IB+ IC;3. Three Types of Circuit Configurations;5.1.2 NPN Transistor: Forward-Active Mode Operation;5.1.3 Current-Voltage Characteristics;;5.1.3 Current-Voltage Characteristics;5.1.3 Current-Voltage Characteristics;5.1.3 Current-Voltage Characteristics;5.1.3 Current-Voltage Characteristics;Modes of Operation;5.1.3 Current-Voltage Characteristics;5.1.3 Current-Voltage Characteristics;5.1.3 Current-Voltage Characteristics;5.1.4 BJT Main Parameters;5.1.4 BJT Main Parameters;5.1.4 BJT Main Parameters;5.1.4 BJT Main Parameters;5.1.4 BJT Main Parameters;Review Questions;Review Questions;(1)VC=6V,VB=0.7V, VE=0V;(2)VC=6V,VB=6V, VE=5.4V;(3)VC=6V,VB=4V, VE=3.6V;e)VC=3.6V,VB=4V, VE=3.4V;R
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